2002. 10. 23 1/2 semiconductor technical data KTA1042D/l epitaxial planar pnp transistor revision no : 2 general purpose application. features low collector-emitter saturation voltage : v ce(sat) =-2.0v(max.). complementary to ktc2022d/l. maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification o:70~140, y:120~240. characteristic symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current i c -5 a base current i b -0.5 a collector power dissipation (tc=25 ) p c 20 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1 ma collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -100 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-1a 70 - 240 h fe (2) v ce =-5v, i c =-4a 20 - - collector-emitter saturation voltage v ce(sat) i c =-4a, i b =-0.4a - - -2.0 v base-emitter voltage v be v ce =-5v, i c =-4a - - -1.5 v transition frequency f t v ce =-5v, i c =-1a - 30 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 270 - pf dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/2 KTA1042D/l revision no : 2 i - v c ce ce collector emitter voltage v (v) 0-1 -2 c 0 collector current i (a) -1 safe operating area -3 -10 -0.1 c collector current i (a) collector-emitter saturation ce(sat) -0.03 -0.01 collector current i (a) c c ce(sat) v - i 10 dc current gain h fe 500 -0.01 collector current i (a) c c fe h - i collector power dissipation p (w) 0 c 50 25 0 ambient temperature ta ( c) pc - ta -3 -4 -5 -6 -7 -2 -3 -4 -5 common emitter tc=25 c i =-20ma b -50 -100 -150 -200 -250 0 -0.03 -0.1 -0.3 -1 -3 -5 30 50 100 300 common emitter v =-5v ce tc=75 c tc=25 c tc=-25 c 75 100 125 150 tc=ta infinite heat sink -30 -100 -200 -0.3 -1 -0.5 -3 -5 -10 -20 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c i max (continuous) c dc operat ion (tc=25 c) v max. ceo 1ms 10 ms 100ms 1s voltage v (v) -0.03 -0.1 -0.3 -1 -3 -5 -0.05 -0.1 -0.3 -0.5 1 2 common emitter i /i =10 cb tc=75 c tc=25 c tc=-25 c collector-emitter voltage v (v) ce 4 8 12 16 20 24
|
